Reference Only

HP8KE6TB1

MOSFETs 100V 17A, Dual Nch+Nch, HSOP8, Power MOSFET: HP8KE6 is a low on-resistance MOSFET ideal for switching applications.

Manufacturer:

Mfr Part:
HP8KE6TB1

TTI Part:
HP8KE6TB1

EDA / CAD Models

Specifications

DescriptionProduct Attribute
Similar
ManufacturerROHM Semiconductor
Product CategoryMOSFETs
TechnologySi
Mounting StyleSMD/SMT
Package / CaseHSOP-8
Transistor PolarityN-Channel
Number of Channels2 Channel
Vds - Drain-Source Breakdown Voltage100 V
Id - Continuous Drain Current17 A
Rds On - Drain-Source Resistance54 mOhms
Vgs - Gate-Source Voltage- 20 V, 20 V
Vgs th - Gate-Source Threshold Voltage2.5 V
Qg - Gate Charge6.7 nC
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
Pd - Power Dissipation21 W
Channel ModeEnhancement
PackagingReel
ConfigurationDual
Fall Time7.5 ns
Forward Transconductance - Min4.9 S
Product TypeMOSFETs
Rise Time8.5 ns
SubcategoryTransistors
Transistor Type2 N-Channel
Typical Turn-Off Delay Time20 ns
Typical Turn-On Delay Time7.5 ns

Export and Environmental Classification

AttributeDescription
ECCNEAR99
HTS8541290065
TARIC8541290000
RoHS CompliantYes
RoHS Compliant
RoHS Exemption NumberN/A
Lead(PB) in TerminalsNo
Lead Free
REACH SVHCNo
REACH Substance NameN/A

Documents

EDA / CAD Models

0In Stock

Available For Backorder
Lead Time: 30 Weeks
Please adjust quantity to minimum and multiple values.
Quantity
---
Unit Price
---
Ext. Price
---

Reel

(Minimum: 2,500 / Multiples: 2,500)
Quantity Unit PriceExt. Price
$0.727$1,817.50
Need more?

My Notes

Sign into see notes.