Reference Only

GNP2050TEC-ZE2

GaN FETs DFN 650V 33.8 HEMT

Manufacturer:

Mfr Part:
GNP2050TEC-ZE2

TTI Part:
GNP2050TEC-ZE2

EDA / CAD Models

Specifications

DescriptionProduct Attribute
Similar
ManufacturerROHM Semiconductor
Product CategoryGaN FETs
Mounting StyleSMD/SMT
Package / CaseDFN-8
Transistor PolarityN-Channel
Number of Channels1 Channel
Vds - Drain-Source Breakdown Voltage650 V
Id - Continuous Drain Current33.8 A
Rds On - Drain-Source Resistance70 mOhms
Vgs - Gate-Source Voltage- 10 V, 6.5 V
Vgs th - Gate-Source Threshold Voltage2.5 V
Qg - Gate Charge6.4 nC
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
Pd - Power Dissipation187 W
Channel ModeEnhancement
ConfigurationSingle
Fall Time10.5 ns
PackagingReel
Product TypeGaN FETs
ProductGaN FETs
Rise Time4.7 ns
SubcategoryTransistors
TechnologyGaN HEMT
Transistor Type1 N-Channel
Typical Turn-Off Delay Time9.3 ns
Typical Turn-On Delay Time7.5 ns

Export and Environmental Classification

AttributeDescription
ECCNEAR99
HTS8541290065
TARIC8541290000
RoHS CompliantYes
RoHS Compliant
RoHS Exemption NumberN/A
Lead(PB) in TerminalsNo
Lead Free
REACH SVHCNo
REACH Substance NameN/A

Documents

EDA / CAD Models

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NCNR - Cannot be cancelled or returned.

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