Reference Only
GNP2025TD-ZTR
GaN FETs EcoGaN, 650V 59.8A TOLL-8N, E-mode Gallium-Nitride(GaN) HEMT
Datasheet
GNP2025TD-ZTR DatasheetSpecifications
| Description | Product Attribute | Similar |
|---|---|---|
| Manufacturer | ROHM Semiconductor | |
| Product Category | GaN FETs | |
| Mounting Style | SMD/SMT | |
| Package / Case | TOLL-8N | |
| Transistor Polarity | N-Channel | |
| Number of Channels | 1 Channel | |
| Vds - Drain-Source Breakdown Voltage | 650 V | |
| Id - Continuous Drain Current | 59.8 A | |
| Rds On - Drain-Source Resistance | 35 mOhms | |
| Vgs - Gate-Source Voltage | - 10 V, + 6.5 V | |
| Vgs th - Gate-Source Threshold Voltage | 2.5 V | |
| Qg - Gate Charge | 13.2 nC | |
| Minimum Operating Temperature | - 55 C | |
| Maximum Operating Temperature | + 150 C | |
| Pd - Power Dissipation | 291 W | |
| Channel Mode | Enhancement | |
| Technology | GaN | |
| Configuration | Single | |
| Fall Time | 26.2 ns | |
| Moisture Sensitive | Yes | |
| Packaging | Reel | |
| Product Type | GaN FETs | |
| Product | GaN HEMT | |
| Rise Time | 8.2 ns | |
| Subcategory | Transistors | |
| Transistor Type | 1 N-Channel | |
| Type | E Mode GaN | |
| Typical Turn-Off Delay Time | 40.1 ns | |
| Typical Turn-On Delay Time | 13.5 ns |
Export and Environmental Classification
| Attribute | Description |
|---|---|
| ECCN | EAR99 |
| RoHS Compliant | Yes RoHS Compliant |
| RoHS Exemption Number | N/A |
| Lead(PB) in Terminals | No Lead Free |
| REACH SVHC | No |
| REACH Substance Name | N/A |
0In Stock
Available For Backorder
Lead Time: 29 Weeks
Quantity
---
Unit Price
---
Ext. Price
---
Reel
(Minimum: 2,000 / Multiples: 2,000)| Quantity | Unit Price | Ext. Price |
|---|---|---|
| $15.60 | $31,200.00 |
Need more?
My Notes
Sign into see notes.