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BSM600D12P4G103

MOSFET Modules SICST 1200V 447A MOSFET MOD

Manufacturer:

Mfr Part:
BSM600D12P4G103

TTI Part:
BSM600D12P4G103

EDA / CAD Models

Specifications

DescriptionProduct Attribute
Similar
ManufacturerROHM Semiconductor
Product CategoryMOSFET Modules
TechnologySiC
Mounting StyleScrew Mount
Package / CaseModule
Transistor PolarityN-Channel
Number of Channels2 Channel
Vds - Drain-Source Breakdown Voltage1.2 kV
Id - Continuous Drain Current567 A
Vgs - Gate-Source Voltage- 4 V, + 21 V
Vgs th - Gate-Source Threshold Voltage4.8 V
Minimum Operating Temperature- 40 C
Maximum Operating Temperature+ 150 C
Pd - Power Dissipation1.78 kW
PackagingBox
ConfigurationDual
Fall Time90 ns
Length152 mm
Product TypeMOSFET Modules
Rise Time110 ns
SubcategoryDiscrete and Power Modules
TypeSiC Power Module
Typical Turn-Off Delay Time435 ns
Typical Turn-On Delay Time135 ns
Vr - Reverse Voltage1.2 kV
Width62 mm

Export and Environmental Classification

AttributeDescription
Country of OriginJapan
ECCNEAR99
HTS8541290065
TARIC8541290000
RoHS CompliantYes
RoHS Compliant
RoHS Exemption NumberN/A
Lead(PB) in TerminalsNo
Lead Free
REACH SVHCNo
REACH Substance NameN/A

Documents

EDA / CAD Models

0In Stock

Available For Backorder
Lead Time: 31 Weeks
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Box

(Minimum: 4 / Multiples: 4)
Quantity Unit PriceExt. Price
$1,475.68$5,902.72
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