Reference Only

BSM400D12P3G002

MOSFET Modules 358A 1200V HALF BRIDGE SIC

Manufacturer:

Mfr Part:
BSM400D12P3G002

TTI Part:
BSM400D12P3G002

EDA / CAD Models

Specifications

DescriptionProduct Attribute
Similar
ManufacturerROHM Semiconductor
Product CategoryMOSFET Modules
TechnologySiC
Mounting StyleScrew Mount
Package / CaseModule
Transistor PolarityN-Channel
Number of Channels2 Channel
Vds - Drain-Source Breakdown Voltage1.2 kV
Id - Continuous Drain Current400 A
Vgs - Gate-Source Voltage- 4 V, + 22 V
Vgs th - Gate-Source Threshold Voltage5.6 V
Minimum Operating Temperature- 40 C
Maximum Operating Temperature+ 150 C
Pd - Power Dissipation1.57 kW
PackagingBox
ConfigurationDual
Fall Time55 ns
Height20.8 mm
Length152 mm
Product TypeMOSFET Modules
Rise Time55 ns
SubcategoryDiscrete and Power Modules
TypeSiC Power Module
Typical Turn-Off Delay Time240 ns
Typical Turn-On Delay Time45 ns
Vr - Reverse Voltage1.2 kV
Width62 mm

Export and Environmental Classification

AttributeDescription
ECCNEAR99
HTS8541590080
TARIC8541590000
RoHS CompliantYes
RoHS Compliant
RoHS Exemption NumberN/A
Lead(PB) in TerminalsNo
Lead Free
REACH SVHCNo
REACH Substance NameN/A

0In Stock

Available For Backorder
Lead Time: 39 Weeks
Please adjust quantity to minimum and multiple values.
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Box

(Minimum: 4 / Multiples: 4)
Quantity Unit PriceExt. Price
$1,245.00$4,980.00
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