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BM3G115MUV-LBE2

GaN FETs HEMT POWER STAGE IC

Manufacturer:

Mfr Part:
BM3G115MUV-LBE2

TTI Part:
BM3G115MUV-LBE2

EDA / CAD Models

Specifications

DescriptionProduct Attribute
Similar
ManufacturerROHM Semiconductor
Product CategoryGaN FETs
Mounting StyleSMD/SMT
Package / CaseVQFN-46
Number of Channels1 Channel
Vds - Drain-Source Breakdown Voltage650 V
Id - Continuous Drain Current12.2 A
Rds On - Drain-Source Resistance195 mOhms
Minimum Operating Temperature- 40 C
Maximum Operating Temperature+ 105 C
Channel ModeEnhancement
TradenameNano Cap; EcoGaN
ConfigurationSingle
Fall Time2.1 ns
Maximum Operating Frequency2 MHz
Moisture SensitiveYes
PackagingReel
Product TypeGaN FETs
ProductHEMTs
Rise Time5 ns
SubcategoryTransistors
TechnologyGaN
TypeGaN HEMT
Typical Turn-Off Delay Time19 ns
Typical Turn-On Delay Time14 ns

Export and Environmental Classification

AttributeDescription
Country of OriginJapan
ECCNEAR99
HTS8542390070
RoHS CompliantYes
RoHS Compliant
RoHS Exemption NumberN/A
Lead(PB) in TerminalsNo
Lead Free
REACH SVHCNo
REACH Substance NameN/A

Documents

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Lead Time: 29 Weeks
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