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AG511EGH7FRATCB

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MOSFETs Pch -40V -40A, DFN3333T8LSAB, Power MOSFET for Automotive

Manufacturer:

Mfr Part:
AG511EGH7FRATCB

TTI Part:
AG511EGH7FRATCB

EDA / CAD Models

Specifications

DescriptionProduct Attribute
Similar
ManufacturerROHM Semiconductor
Product CategoryMOSFETs
TechnologySi
Mounting StyleSMD/SMT
Package / CaseDFN-8
Transistor PolarityP-Channel
Number of Channels1 Channel
Vds - Drain-Source Breakdown Voltage40 V
Id - Continuous Drain Current40 A
Rds On - Drain-Source Resistance17.7 mOhms
Vgs - Gate-Source Voltage- 20 V, 5 V
Vgs th - Gate-Source Threshold Voltage2.5 V
Qg - Gate Charge33 nC
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 175 C
Pd - Power Dissipation62 W
Channel ModeEnhancement
PackagingReel
ConfigurationSingle
Fall Time33 ns
Forward Transconductance - Min13 S
Product TypeMOSFETs
Rise Time16 ns
SubcategoryTransistors
Transistor Type1 P-Channel
Typical Turn-Off Delay Time115 ns
Typical Turn-On Delay Time11 ns

Export and Environmental Classification

AttributeDescription
Country of OriginJapan
ECCNEAR99
TARIC8541290000
RoHS CompliantYes
RoHS Compliant
RoHS Exemption NumberN/A
Lead(PB) in TerminalsNo
Lead Free
REACH SVHCNo
REACH Substance NameN/A

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