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AG508EGD3HRBTL

MOSFETs TO252 P CHAN 40V

Manufacturer:

Mfr Part:
AG508EGD3HRBTL

TTI Part:
AG508EGD3HRBTL

EDA / CAD Models

Specifications

DescriptionProduct Attribute
Similar
ManufacturerROHM Semiconductor
Product CategoryMOSFETs
TechnologySi
Mounting StyleSMD/SMT
Package / CaseTO-252-3
Transistor PolarityP-Channel
Number of Channels1 Channel
Vds - Drain-Source Breakdown Voltage40 V
Id - Continuous Drain Current40 A
Rds On - Drain-Source Resistance24 mOhms
Vgs - Gate-Source Voltage- 20 V, 5 V
Vgs th - Gate-Source Threshold Voltage2.5 V
Qg - Gate Charge27.6 nC
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 175 C
Pd - Power Dissipation53 W
Channel ModeEnhancement
QualificationAEC-Q101
PackagingReel
ConfigurationSingle
Fall Time13 ns
Product TypeMOSFETs
Rise Time8 ns
SubcategoryTransistors
Transistor Type1 P-Channel
Typical Turn-Off Delay Time63 ns
Typical Turn-On Delay Time7 ns

Export and Environmental Classification

AttributeDescription
Country of OriginJapan
ECCNEAR99
HTS8541290065
TARIC8541290000
RoHS CompliantYes
RoHS Compliant
RoHS Exemption NumberN/A
Lead(PB) in TerminalsNo
Lead Free
REACH SVHCNo
REACH Substance NameN/A

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