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AG090FLD3HRBTL

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MOSFETs Nch 60V 80A, TO-252 (DPAK), Power MOSFET for Automotive

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Mfr Part:
AG090FLD3HRBTL

TTI Part:
AG090FLD3HRBTL

EDA / CAD Models

Specifications

DescriptionProduct Attribute
Similar
ManufacturerROHM Semiconductor
Product CategoryMOSFETs
TechnologySi
Mounting StyleSMD/SMT
Package / CaseTO-252-3
Transistor PolarityN-Channel
Number of Channels1 Channel
Vds - Drain-Source Breakdown Voltage60 V
Id - Continuous Drain Current80 A
Rds On - Drain-Source Resistance5.3 mOhms
Vgs - Gate-Source Voltage20 V
Vgs th - Gate-Source Threshold Voltage2.5 V
Qg - Gate Charge32 nC
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 175 C
Pd - Power Dissipation96 W
Channel ModeEnhancement
PackagingReel
ConfigurationSingle
Fall Time13 ns
Forward Transconductance - Min11 S
Product TypeMOSFETs
Rise Time15 ns
SubcategoryTransistors
Transistor Type1 N-Channel
Typical Turn-Off Delay Time64 ns
Typical Turn-On Delay Time21 ns

Export and Environmental Classification

AttributeDescription
Country of OriginThailand
ECCNEAR99
TARIC8541290000
RoHS CompliantYes
RoHS Compliant
RoHS Exemption NumberN/A
Lead(PB) in TerminalsNo
Lead Free
REACH SVHCNo
REACH Substance NameN/A

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