Reference Only

2SCR502U3T106

Bipolar Transistors - BJT NPN Gen Purpse Trans UMT3

Manufacturer:

Mfr Part:
2SCR502U3T106

TTI Part:
2SCR502U3T106

EDA / CAD Models

Specifications

DescriptionProduct Attribute
Similar
ManufacturerROHM Semiconductor
Product CategoryBipolar Transistors - BJT
TechnologySi
Mounting StyleSMD/SMT
Package / CaseSOT-323-3
Transistor PolarityNPN
ConfigurationSingle
Maximum DC Collector Current500 mA
Collector- Emitter Voltage VCEO Max30 V
Collector- Base Voltage VCBO30 V
Emitter- Base Voltage VEBO6 V
Collector-Emitter Saturation Voltage300 mV
Maximum DC Collector Current500 mA
Pd - Power Dissipation200 mW
Gain Bandwidth Product fT360 MHz
Maximum Operating Temperature+ 150 C
PackagingReel
DC Collector/Base Gain hfe Min200 at 100 mA, 2 V
DC Current Gain hFE Max500 at 100 mA, 2 V
Product TypeBJTs - Bipolar Transistors
SubcategoryTransistors
Part # Aliases2SCR502U3

Export and Environmental Classification

AttributeDescription
ECCNEAR99
HTS8541210075
TARIC8541210000
RoHS CompliantYes
RoHS Compliant
RoHS Exemption NumberN/A
Lead(PB) in TerminalsCall to Verify PB
REACH SVHCNo
REACH Substance NameN/A

Documents

EDA / CAD Models

0In Stock

Available For Backorder
Lead Time: 25 Weeks
Please adjust quantity to minimum and multiple values.
Quantity
---
Unit Price
---
Ext. Price
---

Reel

(Minimum: 3,000 / Multiples: 3,000)
Quantity Unit PriceExt. Price
$0.071$213.00
Need more?

My Notes

Sign into see notes.