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2SCR502U3HZGT106

Bipolar Transistors - BJT NPN 30V 0.5A 0.2W SOT-323

Manufacturer:

Mfr Part:
2SCR502U3HZGT106

TTI Part:
2SCR502U3HZGT106

EDA / CAD Models

Specifications

DescriptionProduct Attribute
Similar
ManufacturerROHM Semiconductor
Product CategoryBipolar Transistors - BJT
TechnologySi
Mounting StyleSMD/SMT
Package / CaseSOT-323-3
Transistor PolarityNPN
ConfigurationSingle
Maximum DC Collector Current500 mA
Collector- Emitter Voltage VCEO Max30 V
Collector- Base Voltage VCBO30 V
Emitter- Base Voltage VEBO6 V
Collector-Emitter Saturation Voltage300 mV
Maximum DC Collector Current500 mA
Pd - Power Dissipation200 mW
Gain Bandwidth Product fT360 MHz
Maximum Operating Temperature+ 150 C
QualificationAEC-Q101
PackagingReel
DC Collector/Base Gain hfe Min200 at 100 mA, 2 V
DC Current Gain hFE Max500 at 100 mA, 2 V
Product TypeBJTs - Bipolar Transistors
SubcategoryTransistors
Part # Aliases2SCR502U3HZG

Export and Environmental Classification

AttributeDescription
Country of OriginPhilippines
ECCNEAR99
HTS8541210075
TARIC8541210000
RoHS CompliantRoHS Per Exemption
RoHS Per Exemption
RoHS Exemption NumberN/A
Lead(PB) in TerminalsNo
Lead Free
REACH SVHCNo
REACH Substance NameN/A

0In Stock

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Lead Time: 19 Weeks
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$0.086$258.00
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