Reference Only

2SC4102T106R

Not Recommended for New Designs
Bipolar Transistors - BJT NPN 120V 50MA

Manufacturer:

Mfr Part:
2SC4102T106R

TTI Part:
2SC4102T106R

EDA / CAD Models

Specifications

DescriptionProduct Attribute
Similar
ManufacturerROHM Semiconductor
Product CategoryBipolar Transistors - BJT
TechnologySi
Mounting StyleSMD/SMT
Package / CaseSOT-323-3
Transistor PolarityNPN
ConfigurationSingle
Maximum DC Collector Current50 mA
Collector- Emitter Voltage VCEO Max120 V
Collector- Base Voltage VCBO120 V
Emitter- Base Voltage VEBO5 V
Collector-Emitter Saturation Voltage500 mV
Maximum DC Collector Current50 mA
Pd - Power Dissipation200 mW
Gain Bandwidth Product fT140 MHz
Maximum Operating Temperature+ 150 C
Series2SC4102
PackagingReel
Continuous Collector Current50 mA
DC Collector/Base Gain hfe Min180
DC Current Gain hFE Max560
Product TypeBJTs - Bipolar Transistors
SubcategoryTransistors

Export and Environmental Classification

AttributeDescription
ECCNEAR99
HTS8541210075
TARIC8541290000
RoHS CompliantYes
RoHS Compliant
RoHS Exemption NumberN/A
Lead(PB) in TerminalsNo
Lead Free
REACH SVHCNo
REACH Substance NameN/A

Documents

EDA / CAD Models

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Lead Time: 25 Weeks
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(Minimum: 3,000 / Multiples: 3,000)
Quantity Unit PriceExt. Price
$0.053$159.00
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NCNR - Cannot be cancelled or returned.

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