Reference Only

Q60215Y1113

Phototransistors PHOTODIODE

Manufacturer:

Mfr Part:
Q60215Y1113

TTI Part:
BPY 62-4

EDA / CAD Models

Specifications

DescriptionProduct Attribute
Similar
Manufacturerams OSRAM
Product CategoryPhototransistors
Collector-Emitter Breakdown Voltage35 V
Collector-Emitter Saturation Voltage160 mV
Collector- Emitter Voltage VCEO Max35 V
Dark Current50 nA
Fall Time9 us
Light Current2.5 mA
Maximum On-State Collector Current100 mA
Maximum Operating Temperature+ 125 C
Minimum Operating Temperature- 40 C
Mounting StyleThrough Hole
PackagingBulk
Package / CaseTO-18
Pd - Power Dissipation200 mW
Peak Wavelength830 nm
Product TypePhototransistors
ProductPhototransistors
Rise Time9 us
SeriesBPY 62
SubcategoryOptical Detectors & Sensors
TradenameMetal Can
TypeChip
Wavelength830 nm
Part # AliasesQ60215Y1113

Export and Environmental Classification

AttributeDescription
Country of OriginChina
ECCNEAR99
HTS8541210095
TARIC8541210000
RoHS CompliantYes
RoHS Compliant
RoHS Exemption NumberN/A
Lead(PB) in TerminalsNo
Lead Free
REACH SVHCNo
REACH Substance NameN/A

Documents

EDA / CAD Models

0In Stock

Available For Backorder
Lead Time: 14 Weeks
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Bulk

(Minimum: 2,000 / Multiples: 1,000)
Quantity Unit PriceExt. Price
$1.65$3,300.00
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