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2N2222AUB

Bipolar Transistors - BJT NPN G.P. TRANSISTOR

Manufacturer:

Mfr Part:
2N2222AUB

TTI Part:
2N2222AUB

EDA / CAD Models

Specifications

DescriptionProduct Attribute
Similar
ManufacturerTT Electronics
Product CategoryBipolar Transistors - BJT
TechnologySi
Mounting StyleSMD/SMT
Transistor PolarityNPN
ConfigurationSingle
Maximum DC Collector Current800 mA
Collector- Emitter Voltage VCEO Max50 V
Collector- Base Voltage VCBO75 V
Emitter- Base Voltage VEBO6 V
Collector-Emitter Saturation Voltage1 V
Maximum DC Collector Current800 mA
Pd - Power Dissipation500 mW
Minimum Operating Temperature- 65 C
Maximum Operating Temperature+ 200 C
PackagingWAFL
DC Collector/Base Gain hfe Min50
DC Current Gain hFE Max325
Product TypeBJTs - Bipolar Transistors
SubcategoryTransistors

Export and Environmental Classification

AttributeDescription
Country of OriginMexico
ECCNEAR99
HTS8541210095
TARIC8541401000
RoHS CompliantYes
RoHS Compliant
RoHS Exemption NumberN/A
Lead(PB) in TerminalsNo
Lead Free
REACH SVHCNo
REACH Substance NameN/A

Documents

EDA / CAD Models

0In Stock

Available For Backorder
Lead Time: 34 Weeks
Please adjust quantity to minimum and multiple values.
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WAFL

(Minimum: 120 / Multiples: 30)
Quantity Unit PriceExt. Price
$32.09$3,850.80
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