Reference Only

PMBT5551,235

Bipolar Transistors - BJT The factory is currently not accepting orders for this product.

Manufacturer:

Mfr Part:
PMBT5551,235

TTI Part:
PMBT5551 235

EDA / CAD Models

Specifications

DescriptionProduct Attribute
Similar
ManufacturerNexperia
Product CategoryBipolar Transistors - BJT
Collector- Base Voltage VCBO180 V
Collector-Emitter Saturation Voltage200 mV
Collector- Emitter Voltage VCEO Max160 V
ConfigurationSingle
DC Collector/Base Gain hfe Min80 at 1 mA, 5 V, 80 at 10 mA, 5 V, 30 at 50 mA, 5 V
DC Current Gain hFE Max80 at 1 mA, 5 V
Emitter- Base Voltage VEBO6 V
Gain Bandwidth Product fT300 MHz
Maximum DC Collector Current300 mA
Maximum Operating Temperature+ 150 C
Minimum Operating Temperature- 65 C
Mounting StyleSMD/SMT
PackagingReel
Package / CaseSOT-23-3
Pd - Power Dissipation250 mW
Product TypeBJTs - Bipolar Transistors
SubcategoryTransistors
TechnologySi
Transistor PolarityNPN
Part # Aliases933821840235

Export and Environmental Classification

AttributeDescription
Country of OriginChina
ECCNEAR99
HTS8541210075
TARIC8541210000
RoHS CompliantYes
RoHS Compliant
RoHS Exemption NumberN/A
Lead(PB) in TerminalsNo
Lead Free
REACH SVHCNo
REACH Substance NameN/A

Documents

EDA / CAD Models

20,000In Stock

Please adjust quantity to minimum and multiple values.
Quantity
---
Unit Price
---
Ext. Price
---

Reel

(Minimum: 10,000 / Multiples: 10,000)
Quantity Unit PriceExt. Price
$0.025$250.00
$0.0248$496.00
$0.0245$735.00
$0.0243$1,215.00
$0.024$2,400.00
Need more?
NCNR - Cannot be cancelled or returned.

My Notes

Sign into see notes.