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NSF040120L3A0Q
New Product
SiC MOSFETs TO247 1.2KV 66A N-CH SIC
Datasheet
NSF040120L3A0Q DatasheetSpecifications
| Description | Product Attribute | Similar |
|---|---|---|
| Manufacturer | Nexperia | |
| Product Category | SiC MOSFETs | |
| Mounting Style | Through Hole | |
| Package / Case | TO-247-3 | |
| Transistor Polarity | N-Channel | |
| Number of Channels | 1 Channel | |
| Vds - Drain-Source Breakdown Voltage | 1.2 kV | |
| Id - Continuous Drain Current | 66 A | |
| Rds On - Drain-Source Resistance | 60 mOhms | |
| Vgs - Gate-Source Voltage | - 10 V, + 22 V | |
| Vgs th - Gate-Source Threshold Voltage | 2.9 V | |
| Qg - Gate Charge | 84 nC | |
| Minimum Operating Temperature | - 55 C | |
| Maximum Operating Temperature | + 175 C | |
| Pd - Power Dissipation | 319 W | |
| Channel Mode | Enhancement | |
| Configuration | Single | |
| Fall Time | 9 ns | |
| Packaging | Bulk | |
| Product Type | SiC MOSFETS | |
| Rise Time | 20 ns | |
| Subcategory | Transistors | |
| Technology | SiC | |
| Typical Turn-Off Delay Time | 22 ns | |
| Typical Turn-On Delay Time | 57 ns | |
| Part # Aliases | 934665927127 |
Export and Environmental Classification
| Attribute | Description |
|---|---|
| Country of Origin | China |
| ECCN | EAR99 |
| HTS | 8541290065 |
| TARIC | 8541290000 |
| RoHS Compliant | Yes RoHS Compliant |
| RoHS Exemption Number | N/A |
| Lead(PB) in Terminals | No Lead Free |
| REACH SVHC | Yes |
| REACH Substance Name | Lead (7439-92-1) |
Documents
Datasheet
60In Stock
Quantity
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Unit Price
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Ext. Price
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Bulk
(Minimum: 10 / Multiples: 10)| Quantity | Unit Price | Ext. Price |
|---|---|---|
| $5.38 | $53.80 | |
| $5.31 | $2,389.50 | |
| $5.25 | $4,725.00 | |
| $5.19 | $9,342.00 | |
| $5.13 | $18,468.00 | |
| $5.00 | $36,000.00 |
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