Reference Only

GAN041-650WSBQ

GaN FETs SOT247 650V 47.2A N-CH MOSFET

Manufacturer:

Mfr Part:
GAN041-650WSBQ

TTI Part:
GAN041-650WSBQ

EDA / CAD Models

Specifications

DescriptionProduct Attribute
Similar
ManufacturerNexperia
Product CategoryGaN FETs
Mounting StyleThrough Hole
Package / CaseSOT-429-3
Transistor PolarityN-Channel
Number of Channels1 Channel
Vds - Drain-Source Breakdown Voltage650 V
Id - Continuous Drain Current47.2 A
Rds On - Drain-Source Resistance41 mOhms
Vgs - Gate-Source Voltage- 20 V, + 20 V
Vgs th - Gate-Source Threshold Voltage4.5 V
Qg - Gate Charge22 nC
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 175 C
Pd - Power Dissipation187 W
Channel ModeEnhancement
ConfigurationSingle
Fall Time10 ns
PackagingBox
Product TypeGaN FETs
Rise Time10 ns
SubcategoryTransistors
TechnologyGaN
Part # Aliases934661752127

Export and Environmental Classification

AttributeDescription
Country of OriginPhilippines
ECCNEAR99
HTS8541290065
RoHS CompliantYes
RoHS Compliant
RoHS Exemption NumberN/A
Lead(PB) in TerminalsNo
Lead Free
REACH SVHCNo
REACH Substance NameN/A

67In Stock

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Box

(Minimum: 1 / Multiples: 1)
Quantity Unit PriceExt. Price
$6.52$6.52
$6.45$64.50
$6.39$159.75
$6.33$316.50
$6.26$626.00
$6.20$1,860.00
$6.14$7,368.00
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NCNR - Cannot be cancelled or returned.

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