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MCB60I1200TZ-TUB

SiC MOSFETs TO268 1.2KV 90A SIC POWER

Manufacturer:

Mfr Part:
MCB60I1200TZ-TUB

TTI Part:
MCB60I1200TZ-TUB

EDA / CAD Models

Specifications

DescriptionProduct Attribute
Similar
ManufacturerIXYS
Product CategorySiC MOSFETs
Mounting StyleSMD/SMT
Package / CaseD3PAK-3 (TO-268-3)
Transistor PolarityN-Channel
Vds - Drain-Source Breakdown Voltage1.2 kV
Id - Continuous Drain Current90 A
Rds On - Drain-Source Resistance34 mOhms
Vgs - Gate-Source Voltage- 20 V, + 20 V
Vgs th - Gate-Source Threshold Voltage2 V
Minimum Operating Temperature- 40 C
Maximum Operating Temperature+ 150 C
ConfigurationSingle
PackagingTube
Product TypeSiC MOSFETS
ProductSiC MOSFET Modules
SubcategoryTransistors
TechnologySiC
TypeHalf-Bridge Module

Export and Environmental Classification

AttributeDescription
Country of OriginKorea (South)
ECCNEAR99
HTS8541290065
TARIC8541290000
RoHS CompliantYes
RoHS Compliant
RoHS Exemption NumberN/A
Lead(PB) in TerminalsCall to Verify PB
REACH SVHCYes
REACH Substance NameLead (7439-92-1)

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