Reference Only

IXYT20N120C3D1HV

IGBTs TO268 1200V 17A DIODE

Manufacturer:

Mfr Part:
IXYT20N120C3D1HV

TTI Part:
IXYT20N120C3D1HV

EDA / CAD Models

Specifications

DescriptionProduct Attribute
Similar
ManufacturerIXYS
Product CategoryIGBTs
TechnologySi
Package / CaseD3PAK-3 (TO-268-3)
Mounting StyleSMD/SMT
ConfigurationSingle
Collector- Emitter Voltage VCEO Max1.2 kV
Collector-Emitter Saturation Voltage3.4 V
Maximum Gate Emitter Voltage- 20 V, 20 V
Continuous Collector Current at 25 C36 A
Pd - Power Dissipation230 W
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
PackagingTube
Continuous Collector Current Ic Max88 A
Gate-Emitter Leakage Current100 nA
Moisture SensitiveYes
Product TypeIGBT Transistors
SubcategoryIGBTs

Export and Environmental Classification

AttributeDescription
Country of OriginPhilippines
ECCNEAR99
TARIC8541290000
RoHS CompliantRoHS Per Exemption
RoHS Per Exemption
RoHS Exemption NumberN/A
Lead(PB) in TerminalsCall to Verify PB
REACH SVHCNo
REACH Substance NameN/A
Warning: Cancer and Reproductive Harm - www.p65warnings.ca.gov

Documents

EDA / CAD Models

0In Stock

Available For Backorder
Lead Time: 49 Weeks
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(Minimum: 300 / Multiples: 30)
Quantity Unit PriceExt. Price
$7.52$2,256.00
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