Reference Only

IXYT20N120C3D1HV

IGBTs TO268 1200V 17A DIODE

Manufacturer:

Mfr Part:
IXYT20N120C3D1HV

TTI Part:
IXYT20N120C3D1HV

EDA / CAD Models

Specifications

DescriptionProduct Attribute
Similar
ManufacturerIXYS
Product CategoryIGBTs
TechnologySi
Package / CaseD3PAK-3 (TO-268-3)
Mounting StyleSMD/SMT
ConfigurationSingle
Collector- Emitter Voltage VCEO Max1.2 kV
Collector-Emitter Saturation Voltage3.4 V
Maximum Gate Emitter Voltage- 20 V, 20 V
Continuous Collector Current at 25 C36 A
Pd - Power Dissipation230 W
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
PackagingTube
Continuous Collector Current Ic Max88 A
Gate-Emitter Leakage Current100 nA
Moisture SensitiveYes
Product TypeIGBT Transistors
SubcategoryIGBTs

Export and Environmental Classification

AttributeDescription
Country of OriginKorea (South)
ECCNEAR99
HTS8541290095
TARIC8541290000
RoHS CompliantRoHS Per Exemption
RoHS Per Exemption
RoHS Exemption NumberN/A
Lead(PB) in TerminalsCall to Verify PB
REACH SVHCNo
REACH Substance NameN/A
Warning: Cancer and Reproductive Harm - www.p65warnings.ca.gov

Documents

EDA / CAD Models

0In Stock

Available For Backorder
Lead Time: 43 Weeks
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Tube

(Minimum: 300 / Multiples: 30)
Quantity Unit PriceExt. Price
$6.84$2,052.00
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