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IXYN82N120C3

IGBTs 1200V XPT IGBT GenX3

Manufacturer:

Mfr Part:
IXYN82N120C3

TTI Part:
IXYN82N120C3

EDA / CAD Models

Specifications

DescriptionProduct Attribute
Similar
ManufacturerIXYS
Product CategoryIGBTs
TechnologySi
Package / CaseSOT-227B-4
Mounting StyleScrew Mount
ConfigurationSingle
Collector- Emitter Voltage VCEO Max1.2 kV
Collector-Emitter Saturation Voltage3.2 V
Maximum Gate Emitter Voltage- 20 V, 20 V
Continuous Collector Current at 25 C120 A
Pd - Power Dissipation600 W
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 175 C
SeriesIXYN82N120
PackagingTube
Continuous Collector Current Ic Max120 A
Gate-Emitter Leakage Current100 nA
Product TypeIGBT Transistors
SubcategoryIGBTs
TradenameXPT

Export and Environmental Classification

AttributeDescription
Country of OriginKorea (South)
ECCNEAR99
HTS8541290065
TARIC8541290000
RoHS CompliantYes
RoHS Compliant
RoHS Exemption NumberN/A
Lead(PB) in TerminalsCall to Verify PB
REACH SVHCNo
REACH Substance NameN/A
Warning: Cancer and Reproductive Harm - www.p65warnings.ca.gov

Documents

EDA / CAD Models

0In Stock

Available For Backorder
Lead Time: 34 Weeks
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$20.82$6,246.00
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