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IXYN110N120C4

IGBTs XPT thin-wafer technology, 4th generation (Gen 4) Trench IGBT. Disc IGBT Gen 4 XPT SOT227B

Manufacturer:

Mfr Part:
IXYN110N120C4

TTI Part:
IXYN110N120C4

EDA / CAD Models

Specifications

DescriptionProduct Attribute
Similar
ManufacturerIXYS
Product CategoryIGBTs
TechnologySi
Package / CaseSOT-227-4
Mounting StyleScrew Mount
ConfigurationSingle
Collector- Emitter Voltage VCEO Max1.2 kV
Collector-Emitter Saturation Voltage2.4 V
Maximum Gate Emitter Voltage- 20 V, 20 V
Continuous Collector Current at 25 C220 A
Pd - Power Dissipation830 W
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 175 C
Series1200V XPTTM Gen 6
PackagingTube
Continuous Collector Current Ic Max220 A
Gate-Emitter Leakage Current100 nA
Product TypeIGBT Transistors
SubcategoryIGBTs
TradenameXPT

Export and Environmental Classification

AttributeDescription
Country of OriginKorea (South)
ECCNEAR99
HTS8541210095
TARIC8541210000
RoHS CompliantYes
RoHS Compliant
RoHS Exemption NumberN/A
Lead(PB) in TerminalsCall to Verify PB
REACH SVHCNo
REACH Substance NameN/A

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0In Stock

Available For Backorder
Lead Time: 34 Weeks
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$25.56$7,668.00
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