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IXYK85N120C4H1

IGBTs IXYK85N120C4H1

Manufacturer:

Mfr Part:
IXYK85N120C4H1

TTI Part:
IXYK85N120C4H1

EDA / CAD Models

Specifications

DescriptionProduct Attribute
Similar
ManufacturerIXYS
Product CategoryIGBTs
TechnologySi
Package / CaseTO-264-3
Mounting StyleThrough Hole
ConfigurationSingle
Collector- Emitter Voltage VCEO Max1.2 kV
Collector-Emitter Saturation Voltage2 V
Maximum Gate Emitter Voltage- 20 V, 20 V
Continuous Collector Current at 25 C220 A
Pd - Power Dissipation1.15 kW
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 175 C
PackagingTube
Continuous Collector Current Ic Max220 A
Gate-Emitter Leakage Current100 nA
Product TypeIGBT Transistors
SubcategoryIGBTs
TradenameXPT

Export and Environmental Classification

AttributeDescription
Country of OriginKorea (South)
ECCNEAR99
HTS8541290065
TARIC8541290000
RoHS CompliantYes
RoHS Compliant
RoHS Exemption NumberN/A
Lead(PB) in TerminalsCall to Verify PB
REACH SVHCNo
REACH Substance NameN/A

Documents

EDA / CAD Models

50In Stock

Please adjust quantity to minimum and multiple values.
Quantity
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Unit Price
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Ext. Price
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Tube

(Minimum: 25 / Multiples: 25)
Quantity Unit PriceExt. Price
$10.00$250.00
$9.90$495.00
$9.80$980.00
$9.71$4,855.00
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