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IXYA8N90C3D1

IGBTs 900V 8A 2.5V XPT IGBTs GenX3 w/ Diode

Manufacturer:

Mfr Part:
IXYA8N90C3D1

TTI Part:
IXYA8N90C3D1

EDA / CAD Models

Specifications

DescriptionProduct Attribute
Similar
ManufacturerIXYS
Product CategoryIGBTs
TechnologySi
Package / CaseD2PAK-3 (TO-263-3)
Mounting StyleSMD/SMT
ConfigurationSingle
Collector- Emitter Voltage VCEO Max900 V
Collector-Emitter Saturation Voltage2.5 V
Maximum Gate Emitter Voltage- 20 V, 20 V
Continuous Collector Current at 25 C20 A
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 175 C
SeriesPlanar
PackagingTube
Gate-Emitter Leakage Current100 nA
Product TypeIGBT Transistors
SubcategoryIGBTs
TradenameXPT

Export and Environmental Classification

AttributeDescription
Country of OriginKorea (South)
ECCNEAR99
HTS8532290040
TARIC8541290000
RoHS CompliantRoHS Per Exemption
RoHS Per Exemption
RoHS Exemption NumberN/A
Lead(PB) in TerminalsCall to Verify PB
REACH SVHCYes
REACH Substance NameLead
Warning: Cancer and Reproductive Harm - www.p65warnings.ca.gov

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Lead Time: 45 Weeks
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$2.85$855.00
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