Reference Only

IXTY1R6N100D2

MOSFETs N-CH MOSFETS (D2) 1000V 1.6A

Manufacturer:

Mfr Part:
IXTY1R6N100D2

TTI Part:
IXTY1R6N100D2

EDA / CAD Models

Specifications

DescriptionProduct Attribute
Similar
ManufacturerIXYS
Product CategoryMOSFETs
TechnologySi
Mounting StyleSMD/SMT
Package / CaseDPAK-3 (TO-252-3)
Transistor PolarityN-Channel
Number of Channels1 Channel
Vds - Drain-Source Breakdown Voltage1 kV
Id - Continuous Drain Current1.6 A
Rds On - Drain-Source Resistance10 Ohms
Vgs - Gate-Source Voltage- 20 V, 20 V
Vgs th - Gate-Source Threshold Voltage4.5 V
Qg - Gate Charge27 nC
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
Pd - Power Dissipation100 W
Channel ModeDepletion
PackagingTube
ConfigurationSingle
Fall Time41 ns
Forward Transconductance - Min0.65 S
Product TypeMOSFETs
Rise Time65 ns
SeriesIXTY1R6N100
SubcategoryTransistors
Transistor Type1 N-Channel
Typical Turn-Off Delay Time34 ns
Typical Turn-On Delay Time27 ns

Export and Environmental Classification

AttributeDescription
Country of OriginKorea (South)
ECCNEAR99
HTS8541290065
TARIC8541290000
RoHS CompliantRoHS Per Exemption
RoHS Per Exemption
RoHS Exemption NumberN/A
Lead(PB) in TerminalsCall to Verify PB
REACH SVHCNo
REACH Substance NameN/A
Warning: Cancer and Reproductive Harm - www.p65warnings.ca.gov

Documents

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