Reference Only

IXTY1R4N120P

MOSFETs 1.4 Amps 1200V 15 Rds

Manufacturer:

Mfr Part:
IXTY1R4N120P

TTI Part:
IXTY1R4N120P

EDA / CAD Models

Specifications

DescriptionProduct Attribute
Similar
ManufacturerIXYS
Product CategoryMOSFETs
TechnologySi
Mounting StyleSMD/SMT
Package / CaseDPAK-3 (TO-252-3)
Transistor PolarityN-Channel
Number of Channels1 Channel
Vds - Drain-Source Breakdown Voltage1.2 kV
Id - Continuous Drain Current1.4 A
Rds On - Drain-Source Resistance15 Ohms
Vgs - Gate-Source Voltage- 30 V, 30 V
Vgs th - Gate-Source Threshold Voltage4.5 V
Qg - Gate Charge24.8 nC
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
Pd - Power Dissipation86 W
Channel ModeEnhancement
PackagingTube
ConfigurationSingle
Product TypeMOSFETs
SubcategoryTransistors
Transistor Type1 N-Channel

Export and Environmental Classification

AttributeDescription
Country of OriginKorea (South)
ECCNEAR99
HTS8541290065
TARIC8541290000
RoHS CompliantYes
RoHS Compliant
RoHS Exemption NumberN/A
Lead(PB) in TerminalsCall to Verify PB
REACH SVHCNo
REACH Substance NameN/A
Warning: Cancer and Reproductive Harm - www.p65warnings.ca.gov

Documents

EDA / CAD Models

700In Stock

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(Minimum: 70 / Multiples: 70)
Quantity Unit PriceExt. Price
$2.45$171.50
$2.42$338.80
$2.40$672.00
$2.37$1,327.20
$2.25$2,362.50
$2.21$4,486.30
$2.16$10,886.40
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