Reference Only
IXTY1N80P
MOSFETs POLAR MOSFET WITH REDUCED RDS 800V 1A
Datasheet
IXTY1N80P DatasheetSpecifications
| Description | Product Attribute | Similar |
|---|---|---|
| Manufacturer | IXYS | |
| Product Category | MOSFETs | |
| Technology | Si | |
| Mounting Style | SMD/SMT | |
| Package / Case | DPAK-3 (TO-252-3) | |
| Transistor Polarity | N-Channel | |
| Number of Channels | 1 Channel | |
| Vds - Drain-Source Breakdown Voltage | 800 V | |
| Id - Continuous Drain Current | 1 A | |
| Rds On - Drain-Source Resistance | 14 Ohms | |
| Packaging | Tube | |
| Configuration | Single | |
| Product Type | MOSFETs | |
| Series | IXTY1N80 | |
| Subcategory | Transistors | |
| Transistor Type | 1 N-Channel |
Export and Environmental Classification
| Attribute | Description |
|---|---|
| Country of Origin | Korea (South) |
| ECCN | EAR99 |
| HTS | 8541900080 |
| TARIC | 8541900000 |
| RoHS Compliant | RoHS Per Exemption RoHS Per Exemption |
| RoHS Exemption Number | N/A |
| Lead(PB) in Terminals | Call to Verify PB |
| REACH SVHC | Yes |
| REACH Substance Name | Lead |
0In Stock
Available For Backorder
Lead Time: 34 Weeks
Quantity
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Unit Price
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Ext. Price
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Tube
(Minimum: 350 / Multiples: 70)| Quantity | Unit Price | Ext. Price |
|---|---|---|
| $1.54 | $539.00 |
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