Reference Only
IXTY08N100D2
MOSFETs 8mAmps 1000V
Datasheet
IXTY08N100D2 DatasheetSpecifications
| Description | Product Attribute | Similar |
|---|---|---|
| Manufacturer | IXYS | |
| Product Category | MOSFETs | |
| Technology | Si | |
| Mounting Style | SMD/SMT | |
| Package / Case | DPAK-3 (TO-252-3) | |
| Transistor Polarity | N-Channel | |
| Number of Channels | 1 Channel | |
| Vds - Drain-Source Breakdown Voltage | 1 kV | |
| Id - Continuous Drain Current | 800 mA | |
| Rds On - Drain-Source Resistance | 21 Ohms | |
| Vgs - Gate-Source Voltage | 20 V | |
| Vgs th - Gate-Source Threshold Voltage | 2 V | |
| Qg - Gate Charge | 14.6 nC | |
| Minimum Operating Temperature | - 55 C | |
| Maximum Operating Temperature | + 150 C | |
| Pd - Power Dissipation | 60 W | |
| Channel Mode | Depletion | |
| Packaging | Tube | |
| Configuration | Single | |
| Fall Time | 48 ns | |
| Forward Transconductance - Min | 330 mS | |
| Product Type | MOSFETs | |
| Rise Time | 57 ns | |
| Series | IXTY08N100 | |
| Subcategory | Transistors | |
| Transistor Type | 1 N-Channel | |
| Typical Turn-Off Delay Time | 34 ns | |
| Typical Turn-On Delay Time | 28 ns |
Export and Environmental Classification
| Attribute | Description |
|---|---|
| Country of Origin | Korea (South) |
| ECCN | EAR99 |
| HTS | 8541290065 |
| TARIC | 8541290000 |
| RoHS Compliant | Call to Verify RoHS |
| RoHS Exemption Number | N/A |
| Lead(PB) in Terminals | Call to Verify PB |
| REACH SVHC | No |
| REACH Substance Name | N/A |
0In Stock
700
On Order
700 expected on from 09-Feb-27
Quantity
---
Unit Price
---
Ext. Price
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Tube
(Minimum: 70 / Multiples: 70)| Quantity | Unit Price | Ext. Price |
|---|---|---|
| $2.62 | $183.40 |
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