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IXTY01N100D

MOSFETs MOSFET N-CH DEPLETN 1000V 100MA TO-25

Manufacturer:

Mfr Part:
IXTY01N100D

TTI Part:
IXTY01N100D

EDA / CAD Models

Specifications

DescriptionProduct Attribute
Similar
ManufacturerIXYS
Product CategoryMOSFETs
TechnologySi
Mounting StyleSMD/SMT
Package / CaseDPAK-3 (TO-252-3)
Transistor PolarityN-Channel
Number of Channels1 Channel
Vds - Drain-Source Breakdown Voltage1 kV
Id - Continuous Drain Current100 mA
Rds On - Drain-Source Resistance80 Ohms
Vgs - Gate-Source Voltage- 20 V, 20 V
Vgs th - Gate-Source Threshold Voltage4.5 V
Qg - Gate Charge5.8 nC
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
Pd - Power Dissipation1.1 W
Channel ModeDepletion
PackagingTube
ConfigurationSingle
Fall Time6 ns
Product TypeMOSFETs
Rise Time6 ns
SubcategoryTransistors
Transistor Type1 N-Channel
Typical Turn-Off Delay Time30 ns
Typical Turn-On Delay Time8 ns

Export and Environmental Classification

AttributeDescription
Country of OriginKorea (South)
ECCNEAR99
HTS8541290065
TARIC8541290000
RoHS CompliantCall to Verify RoHS
RoHS Exemption NumberN/A
Lead(PB) in TerminalsCall to Verify PB
REACH SVHCNo
REACH Substance NameN/A
Warning: Cancer and Reproductive Harm - www.p65warnings.ca.gov

Documents

EDA / CAD Models

0In Stock

140
On Order
140 expected 20-Oct-26
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(Minimum: 350 / Multiples: 70)
Quantity Unit PriceExt. Price
$2.35$822.50
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