Reference Only

IXTX600N04T2

MOSFETs GigaMOS Trench T2 HiperFET PWR MOSFET

Manufacturer:

Mfr Part:
IXTX600N04T2

TTI Part:
IXTX600N04T2

EDA / CAD Models

Specifications

DescriptionProduct Attribute
Similar
ManufacturerIXYS
Product CategoryMOSFETs
TechnologySi
Mounting StyleThrough Hole
Package / CaseTO-247-3
Transistor PolarityN-Channel
Number of Channels1 Channel
Vds - Drain-Source Breakdown Voltage40 V
Id - Continuous Drain Current600 A
Rds On - Drain-Source Resistance1.5 mOhms
Vgs - Gate-Source Voltage- 20 V, 20 V
Vgs th - Gate-Source Threshold Voltage1.5 V
Qg - Gate Charge590 nC
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 175 C
Pd - Power Dissipation1.25 mW
Channel ModeEnhancement
TradenameHiPerFET
PackagingTube
ConfigurationSingle
Fall Time250 ns
Forward Transconductance - Min90 S
Product TypeMOSFETs
Rise Time20 ns
SeriesIXTX600N04
SubcategoryTransistors
Transistor Type1 N-Channel
Typical Turn-Off Delay Time90 ns
Typical Turn-On Delay Time40 ns

Export and Environmental Classification

AttributeDescription
Country of OriginKorea (South)
ECCNEAR99
HTS8541290065
TARIC8541290000
RoHS CompliantYes
RoHS Compliant
RoHS Exemption NumberN/A
Lead(PB) in TerminalsCall to Verify PB
REACH SVHCNo
REACH Substance NameN/A
Warning: Cancer and Reproductive Harm - www.p65warnings.ca.gov

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