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IXTX200N10L2

MOSFETs L2 Linear Power MOSFET

Manufacturer:

Mfr Part:
IXTX200N10L2

TTI Part:
IXTX200N10L2

EDA / CAD Models

Specifications

DescriptionProduct Attribute
Similar
ManufacturerIXYS
Product CategoryMOSFETs
TechnologySi
Mounting StyleThrough Hole
Package / CaseTO-247-3
Transistor PolarityN-Channel
Number of Channels1 Channel
Vds - Drain-Source Breakdown Voltage100 V
Id - Continuous Drain Current200 A
Rds On - Drain-Source Resistance11 mOhms
Vgs - Gate-Source Voltage- 20 V, 20 V
Vgs th - Gate-Source Threshold Voltage4.5 V
Qg - Gate Charge540 nC
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
Pd - Power Dissipation1.04 kW
Channel ModeEnhancement
TradenameLinear L2
PackagingTube
ConfigurationSingle
Fall Time27 ns
Forward Transconductance - Min55 S
Product TypeMOSFETs
Rise Time225 ns
SeriesIXTX200N10
SubcategoryTransistors
Typical Turn-Off Delay Time127 ns
Typical Turn-On Delay Time40 ns

Export and Environmental Classification

AttributeDescription
Country of OriginKorea (South)
ECCNEAR99
HTS8541290065
TARIC8541290000
RoHS CompliantYes
RoHS Compliant
RoHS Exemption NumberN/A
Lead(PB) in TerminalsCall to Verify PB
REACH SVHCNo
REACH Substance NameN/A
Warning: Cancer and Reproductive Harm - www.p65warnings.ca.gov

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