Reference Only

IXTT68P20T

MOSFETs TrenchP Power MOSFET

Manufacturer:

Mfr Part:
IXTT68P20T

TTI Part:
IXTT68P20T

EDA / CAD Models

Specifications

DescriptionProduct Attribute
Similar
ManufacturerIXYS
Product CategoryMOSFETs
TechnologySi
Mounting StyleSMD/SMT
Package / CaseTO-268-3
Transistor PolarityP-Channel
Number of Channels1 Channel
Vds - Drain-Source Breakdown Voltage200 V
Id - Continuous Drain Current68 A
Rds On - Drain-Source Resistance55 mOhms
Vgs - Gate-Source Voltage- 15 V, 15 V
Vgs th - Gate-Source Threshold Voltage4 V
Qg - Gate Charge380 nC
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
Pd - Power Dissipation568 W
Channel ModeEnhancement
PackagingTube
ConfigurationSingle
Product TypeMOSFETs
SeriesIXTT68P20
SubcategoryTransistors
Transistor Type1 P-Channel

Export and Environmental Classification

AttributeDescription
Country of OriginPhilippines
ECCNEAR99
HTS8541290065
TARIC8541290000
RoHS CompliantRoHS Per Exemption
RoHS Per Exemption
RoHS Exemption NumberN/A
Lead(PB) in TerminalsCall to Verify PB
REACH SVHCNo
REACH Substance NameN/A
Warning: Cancer and Reproductive Harm - www.p65warnings.ca.gov

Documents

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Lead Time: 39 Weeks
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