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IXTT60N20L2

MOSFETs LINEAR L2 SERIES MOSFET 200V 60A

Manufacturer:

Mfr Part:
IXTT60N20L2

TTI Part:
IXTT60N20L2

EDA / CAD Models

Specifications

DescriptionProduct Attribute
Similar
ManufacturerIXYS
Product CategoryMOSFETs
TechnologySi
Mounting StyleSMD/SMT
Package / CaseD3PAK-3 (TO-268-3)
Transistor PolarityN-Channel
Number of Channels1 Channel
Vds - Drain-Source Breakdown Voltage200 V
Id - Continuous Drain Current60 A
Rds On - Drain-Source Resistance45 mOhms
Vgs - Gate-Source Voltage- 20 V, 20 V
Vgs th - Gate-Source Threshold Voltage4.5 V
Qg - Gate Charge255 nC
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
Pd - Power Dissipation540 W
Channel ModeEnhancement
TradenameLinear L2
PackagingTube
ConfigurationSingle
Fall Time18 ns
Forward Transconductance - Min35 S
Product TypeMOSFETs
Rise Time23 ns
SeriesIXTT60N20
SubcategoryTransistors
Transistor Type1 N-Channel
Typical Turn-Off Delay Time90 ns
Typical Turn-On Delay Time26 ns

Export and Environmental Classification

AttributeDescription
Country of OriginPhilippines
ECCNEAR99
HTS8541290065
TARIC8541900000
RoHS CompliantRoHS Per Exemption
RoHS Per Exemption
RoHS Exemption NumberN/A
Lead(PB) in TerminalsCall to Verify PB
REACH SVHCYes
REACH Substance NameLead
Warning: Cancer and Reproductive Harm - www.p65warnings.ca.gov

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EDA / CAD Models

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