Reference Only

IXTT26N50P

MOSFETs 26 Amps 500V 0.23 Ohm Rds

Manufacturer:

Mfr Part:
IXTT26N50P

TTI Part:
IXTT26N50P

EDA / CAD Models

Specifications

DescriptionProduct Attribute
Similar
ManufacturerIXYS
Product CategoryMOSFETs
TechnologySi
Mounting StyleSMD/SMT
Package / CaseD3PAK-3 (TO-268-3)
Transistor PolarityN-Channel
Number of Channels1 Channel
Vds - Drain-Source Breakdown Voltage500 V
Id - Continuous Drain Current26 A
Rds On - Drain-Source Resistance230 mOhms
Vgs - Gate-Source Voltage- 30 V, 30 V
Vgs th - Gate-Source Threshold Voltage5.5 V
Qg - Gate Charge65 nC
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
Pd - Power Dissipation400 W
Channel ModeEnhancement
TradenamePolarHV
PackagingTube
ConfigurationSingle
Fall Time20 ns
Forward Transconductance - Min24 S
Product TypeMOSFETs
Rise Time25 ns
SeriesIXTT26N50
SubcategoryTransistors
Transistor Type1 N-Channel
Typical Turn-Off Delay Time58 ns
Typical Turn-On Delay Time20 ns

Export and Environmental Classification

AttributeDescription
Country of OriginPhilippines
ECCNEAR99
HTS8541290065
TARIC8541290000
RoHS CompliantCall to Verify RoHS
RoHS Exemption NumberN/A
Lead(PB) in TerminalsCall to Verify PB
REACH SVHCYes
REACH Substance NameLead
Warning: Cancer and Reproductive Harm - www.p65warnings.ca.gov

Documents

EDA / CAD Models

0In Stock

Available For Backorder
Lead Time: 39 Weeks
Please adjust quantity to minimum and multiple values.
Quantity
---
Unit Price
---
Ext. Price
---

Tube

(Minimum: 300 / Multiples: 30)
Quantity Unit PriceExt. Price
$6.05$1,815.00
Need more?

Associated Parts

MGJ2D052005SC Murata
DC/DC Converters - Through Hole 2W 5-20VIN 5VOUT DC/DC

My Notes

Sign into see notes.