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IXTT1N300P3HV

MOSFETs TO268 3KV 1A N-CH POLAR

Manufacturer:

Mfr Part:
IXTT1N300P3HV

TTI Part:
IXTT1N300P3HV

EDA / CAD Models

Specifications

DescriptionProduct Attribute
Similar
ManufacturerIXYS
Product CategoryMOSFETs
TechnologySi
Mounting StyleSMD/SMT
Package / CaseD3PAK-3 (TO-268-3)
Transistor PolarityN-Channel
Number of Channels1 Channel
Vds - Drain-Source Breakdown Voltage3 kV
Id - Continuous Drain Current1 A
Rds On - Drain-Source Resistance50 Ohms
Vgs - Gate-Source Voltage- 20 V, 20 V
Vgs th - Gate-Source Threshold Voltage2 V
Qg - Gate Charge30.6 nC
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
Pd - Power Dissipation195 W
Channel ModeEnhancement
PackagingTube
ConfigurationSingle
Fall Time60 ns
Moisture SensitiveYes
Product TypeMOSFETs
Rise Time35 ns
SubcategoryTransistors
Transistor Type1 N-Channel
Typical Turn-Off Delay Time78 ns
Typical Turn-On Delay Time22 ns

Export and Environmental Classification

AttributeDescription
Country of OriginKorea (South)
ECCNEAR99
HTS8541290065
TARIC8541290000
RoHS CompliantYes
RoHS Compliant
RoHS Exemption NumberN/A
Lead(PB) in TerminalsCall to Verify PB
REACH SVHCNo
REACH Substance NameN/A
Warning: Cancer and Reproductive Harm - www.p65warnings.ca.gov

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6In Stock

24 expected 24-Sep-26
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