Reference Only

IXTT16N50D2

MOSFETs D2 Depletion Mode Power MOSFETs

Manufacturer:

Mfr Part:
IXTT16N50D2

TTI Part:
IXTT16N50D2

EDA / CAD Models

Specifications

DescriptionProduct Attribute
Similar
ManufacturerIXYS
Product CategoryMOSFETs
TechnologySi
Mounting StyleSMD/SMT
Package / CaseD3PAK-3 (TO-268-3)
Transistor PolarityN-Channel
Number of Channels1 Channel
Vds - Drain-Source Breakdown Voltage500 V
Id - Continuous Drain Current16 A
Rds On - Drain-Source Resistance300 mOhms
Vgs - Gate-Source Voltage- 20 V, 20 V
Vgs th - Gate-Source Threshold Voltage2 V
Qg - Gate Charge199 nC
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
Pd - Power Dissipation695 W
Channel ModeDepletion
PackagingTube
ConfigurationSingle
Fall Time220 ns
Forward Transconductance - Min7 S
Product TypeMOSFETs
Rise Time173 ns
SeriesIXTT16N50
SubcategoryTransistors
Transistor Type1 N-Channel
Typical Turn-Off Delay Time203 ns
Typical Turn-On Delay Time50 ns

Export and Environmental Classification

AttributeDescription
Country of OriginPhilippines
ECCNEAR99
HTS8541290065
TARIC8541290000
RoHS CompliantRoHS Per Exemption
RoHS Per Exemption
RoHS Exemption NumberN/A
Lead(PB) in TerminalsCall to Verify PB
REACH SVHCYes
REACH Substance NameLead
Warning: Cancer and Reproductive Harm - www.p65warnings.ca.gov

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