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IXTT12N150

MOSFETs 1500V High Voltage Power MOSFET

Manufacturer:

Mfr Part:
IXTT12N150

TTI Part:
IXTT12N150

EDA / CAD Models

Specifications

DescriptionProduct Attribute
Similar
ManufacturerIXYS
Product CategoryMOSFETs
TechnologySi
Mounting StyleSMD/SMT
Package / CaseD3PAK-3 (TO-268-3)
Transistor PolarityN-Channel
Number of Channels1 Channel
Vds - Drain-Source Breakdown Voltage1.2 kV
Id - Continuous Drain Current12 A
Rds On - Drain-Source Resistance2 Ohms
Vgs - Gate-Source Voltage- 30 V, 30 V
Vgs th - Gate-Source Threshold Voltage4.5 V
Qg - Gate Charge106 nC
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
Pd - Power Dissipation890 W
Channel ModeEnhancement
PackagingTube
ConfigurationSingle
Fall Time14 ns
Forward Transconductance - Min8 S
Product TypeMOSFETs
Rise Time16 ns
SeriesIXTT12N150
SubcategoryTransistors
Typical Turn-Off Delay Time53 ns
Typical Turn-On Delay Time26 ns

Export and Environmental Classification

AttributeDescription
Country of OriginPhilippines
ECCNEAR99
HTS8541290065
TARIC8541290000
RoHS CompliantRoHS Per Exemption
RoHS Per Exemption
RoHS Exemption NumberN/A
Lead(PB) in TerminalsCall to Verify PB
REACH SVHCYes
REACH Substance NameLead
Warning: Cancer and Reproductive Harm - www.p65warnings.ca.gov

Documents

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300 expected 29-Jun-26
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