Reference Only

IXTT11P50

MOSFETs 11 Amps 500V 0.75 Rds

Manufacturer:

Mfr Part:
IXTT11P50

TTI Part:
IXTT11P50

EDA / CAD Models

Specifications

DescriptionProduct Attribute
Similar
ManufacturerIXYS
Product CategoryMOSFETs
TechnologySi
Mounting StyleSMD/SMT
Package / CaseD3PAK-3 (TO-268-3)
Transistor PolarityP-Channel
Number of Channels1 Channel
Vds - Drain-Source Breakdown Voltage500 V
Id - Continuous Drain Current11 A
Rds On - Drain-Source Resistance750 mOhms
Vgs - Gate-Source Voltage- 20 V, 20 V
Vgs th - Gate-Source Threshold Voltage5 V
Qg - Gate Charge130 nC
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
Pd - Power Dissipation300 W
Channel ModeEnhancement
PackagingTube
ConfigurationSingle
Fall Time35 ns
Forward Transconductance - Min5 S
Product TypeMOSFETs
Rise Time27 ns
SeriesIXTT11P50
SubcategoryTransistors
Transistor Type1 P-Channel
Typical Turn-Off Delay Time35 ns
Typical Turn-On Delay Time33 ns

Export and Environmental Classification

AttributeDescription
Country of OriginPhilippines
ECCNEAR99
HTS8541290065
TARIC8541100000
RoHS CompliantRoHS Per Exemption
RoHS Per Exemption
RoHS Exemption NumberN/A
Lead(PB) in TerminalsCall to Verify PB
REACH SVHCYes
REACH Substance NameLead
Warning: Cancer and Reproductive Harm - www.p65warnings.ca.gov

Documents

EDA / CAD Models

150In Stock

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(Minimum: 30 / Multiples: 30)
Quantity Unit PriceExt. Price
$8.02$240.60
$7.93$475.80
$7.72$926.40
$7.02$3,580.20
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