Reference Only

IXTT110N10L2

MOSFETs Linear Extended FBSOA Power MOSFET

Manufacturer:

Mfr Part:
IXTT110N10L2

TTI Part:
IXTT110N10L2

EDA / CAD Models

Specifications

DescriptionProduct Attribute
Similar
ManufacturerIXYS
Product CategoryMOSFETs
TechnologySi
Mounting StyleSMD/SMT
Package / CaseD3PAK-3 (TO-268-3)
Transistor PolarityN-Channel
Number of Channels1 Channel
Vds - Drain-Source Breakdown Voltage100 V
Id - Continuous Drain Current110 A
Rds On - Drain-Source Resistance18 mOhms
Vgs - Gate-Source Voltage- 20 V, 20 V
Vgs th - Gate-Source Threshold Voltage2.5 V
Qg - Gate Charge260 nC
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
Pd - Power Dissipation600 W
Channel ModeEnhancement
PackagingTube
ConfigurationSingle
Fall Time24 ns
Forward Transconductance - Min45 S
Product TypeMOSFETs
Rise Time130 ns
SeriesIXTT110N10
SubcategoryTransistors
Transistor Type1 N-Channel
Typical Turn-Off Delay Time99 ns
Typical Turn-On Delay Time28 ns

Export and Environmental Classification

AttributeDescription
Country of OriginPhilippines
ECCNEAR99
HTS8541290065
TARIC8541290000
RoHS CompliantRoHS Per Exemption
RoHS Per Exemption
RoHS Exemption NumberN/A
Lead(PB) in TerminalsCall to Verify PB
REACH SVHCNo
REACH Substance NameN/A
Warning: Cancer and Reproductive Harm - www.p65warnings.ca.gov

Documents

EDA / CAD Models

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820
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820 expected on  from 19-Oct-26
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