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IXTQ60N20T

MOSFETs TO3P 200V 60A N-CH TRENCH

Manufacturer:

Mfr Part:
IXTQ60N20T

TTI Part:
IXTQ60N20T

EDA / CAD Models

Specifications

DescriptionProduct Attribute
Similar
ManufacturerIXYS
Product CategoryMOSFETs
TechnologySi
Mounting StyleThrough Hole
Package / CaseTO-3P-3
Transistor PolarityN-Channel
Number of Channels1 Channel
Vds - Drain-Source Breakdown Voltage200 V
Id - Continuous Drain Current60 A
Rds On - Drain-Source Resistance40 mOhms
Vgs - Gate-Source Voltage- 20 V, 20 V
Vgs th - Gate-Source Threshold Voltage3 V
Qg - Gate Charge73 nC
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 175 C
Pd - Power Dissipation500 W
Channel ModeEnhancement
TradenameHiPerFET
PackagingTube
ConfigurationSingle
Fall Time22 ns
Forward Transconductance - Min40 S
Product TypeMOSFETs
Rise Time13 ns
SubcategoryTransistors
Transistor Type1 N-Channel
Typical Turn-Off Delay Time33 ns
Typical Turn-On Delay Time22 ns

Export and Environmental Classification

AttributeDescription
Country of OriginKorea (South)
ECCNEAR99
HTS8541290065
TARIC8541290000
RoHS CompliantYes
RoHS Compliant
RoHS Exemption NumberN/A
Lead(PB) in TerminalsCall to Verify PB
REACH SVHCNo
REACH Substance NameN/A
Warning: Cancer and Reproductive Harm - www.p65warnings.ca.gov

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