Reference Only

IXTQ52P10P

MOSFETs -52.0 Amps -100V 0.050 Rds

Manufacturer:

Mfr Part:
IXTQ52P10P

TTI Part:
IXTQ52P10P

EDA / CAD Models

Specifications

DescriptionProduct Attribute
Similar
ManufacturerIXYS
Product CategoryMOSFETs
TechnologySi
Mounting StyleThrough Hole
Package / CaseTO-3P-3
Transistor PolarityP-Channel
Number of Channels1 Channel
Vds - Drain-Source Breakdown Voltage100 V
Id - Continuous Drain Current52 A
Rds On - Drain-Source Resistance50 mOhms
Vgs - Gate-Source Voltage- 20 V, 20 V
Vgs th - Gate-Source Threshold Voltage4 V
Qg - Gate Charge60 nC
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
Pd - Power Dissipation300 W
Channel ModeEnhancement
TradenamePolarP
PackagingTube
ConfigurationSingle
Fall Time22 ns
Forward Transconductance - Min12 S
Product TypeMOSFETs
Rise Time29 ns
SeriesIXTQ52P10
SubcategoryTransistors
Transistor Type1 P-Channel
Typical Turn-Off Delay Time38 ns
Typical Turn-On Delay Time22 ns

Export and Environmental Classification

AttributeDescription
Country of OriginKorea (South)
ECCNEAR99
HTS8541290065
TARIC8541290000
RoHS CompliantYes
RoHS Compliant
RoHS Exemption NumberN/A
Lead(PB) in TerminalsCall to Verify PB
REACH SVHCNo
REACH Substance NameN/A
Warning: Cancer and Reproductive Harm - www.p65warnings.ca.gov

Documents

EDA / CAD Models

300In Stock

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(Minimum: 30 / Multiples: 30)
Quantity Unit PriceExt. Price
$4.32$129.60
$4.28$513.60
$3.92$1,999.20
$3.78$3,855.60
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