Reference Only

IXTQ26N50P

MOSFETs 26.0 Amps 500 V 0.23 Ohm Rds

Manufacturer:

Mfr Part:
IXTQ26N50P

TTI Part:
IXTQ26N50P

EDA / CAD Models

Specifications

DescriptionProduct Attribute
Similar
ManufacturerIXYS
Product CategoryMOSFETs
TechnologySi
Mounting StyleThrough Hole
Package / CaseTO-3P-3
Transistor PolarityN-Channel
Number of Channels1 Channel
Vds - Drain-Source Breakdown Voltage500 V
Id - Continuous Drain Current26 A
Rds On - Drain-Source Resistance230 mOhms
Vgs - Gate-Source Voltage- 30 V, 30 V
Vgs th - Gate-Source Threshold Voltage3 V
Qg - Gate Charge65 nC
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
Pd - Power Dissipation400 W
Channel ModeEnhancement
PackagingTube
ConfigurationSingle
Fall Time20 ns
Forward Transconductance - Min31 S
Product TypeMOSFETs
Rise Time25 ns
SeriesIXTQ26N50
SubcategoryTransistors
Transistor Type1 N-Channel
Typical Turn-Off Delay Time58 ns
Typical Turn-On Delay Time20 ns

Export and Environmental Classification

AttributeDescription
Country of OriginKorea (South)
ECCNEAR99
HTS8541290065
TARIC8541290000
RoHS CompliantYes
RoHS Compliant
RoHS Exemption NumberN/A
Lead(PB) in TerminalsCall to Verify PB
REACH SVHCNo
REACH Substance NameN/A
Warning: Cancer and Reproductive Harm - www.p65warnings.ca.gov

Documents

EDA / CAD Models

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