Reference Only

IXTQ200N10T

MOSFETs 200 Amps 100V 5.4 Rds

Manufacturer:

Mfr Part:
IXTQ200N10T

TTI Part:
IXTQ200N10T

EDA / CAD Models

Specifications

DescriptionProduct Attribute
Similar
ManufacturerIXYS
Product CategoryMOSFETs
TechnologySi
Mounting StyleThrough Hole
Package / CaseTO-3P-3
Transistor PolarityN-Channel
Number of Channels1 Channel
Vds - Drain-Source Breakdown Voltage100 V
Id - Continuous Drain Current200 A
Rds On - Drain-Source Resistance5.5 mOhms
Vgs - Gate-Source Voltage- 30 V, 30 V
Vgs th - Gate-Source Threshold Voltage2.5 V
Qg - Gate Charge152 nC
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 175 C
Pd - Power Dissipation550 W
Channel ModeEnhancement
TradenameHiPerFET
PackagingTube
ConfigurationSingle
Fall Time34 ns
Product TypeMOSFETs
Rise Time31 ns
SeriesIXTQ200N10
SubcategoryTransistors
Transistor Type1 N-Channel
Typical Turn-Off Delay Time45 ns
Typical Turn-On Delay Time35 ns

Export and Environmental Classification

AttributeDescription
Country of OriginKorea (South)
ECCNEAR99
HTS8541290065
TARIC8541290000
RoHS CompliantYes
RoHS Compliant
RoHS Exemption NumberN/A
Lead(PB) in TerminalsCall to Verify PB
REACH SVHCNo
REACH Substance NameN/A
Warning: Cancer and Reproductive Harm - www.p65warnings.ca.gov

Documents

EDA / CAD Models

240In Stock

Please adjust quantity to minimum and multiple values.
Quantity
---
Unit Price
---
Ext. Price
---

Tube

(Minimum: 30 / Multiples: 30)
Quantity Unit PriceExt. Price
$4.92$147.60
$4.87$438.30
$4.82$1,446.00
$4.54$2,315.40
$4.48$4,569.60
Need more?

My Notes

Sign into see notes.