Reference Only

IXTP80N12T2

MOSFETs TO220 120V 80A N-CH TRENCH

Manufacturer:

Mfr Part:
IXTP80N12T2

TTI Part:
IXTP80N12T2

EDA / CAD Models

Specifications

DescriptionProduct Attribute
Similar
ManufacturerIXYS
Product CategoryMOSFETs
TechnologySi
Mounting StyleThrough Hole
Package / CaseTO-220-3
Transistor PolarityN-Channel
Number of Channels1 Channel
Vds - Drain-Source Breakdown Voltage120 V
Id - Continuous Drain Current80 A
Rds On - Drain-Source Resistance17 mOhms
Vgs - Gate-Source Voltage- 20 V, 20 V
Vgs th - Gate-Source Threshold Voltage2.5 V
Qg - Gate Charge80 nC
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 175 C
Pd - Power Dissipation325 W
Channel ModeEnhancement
TradenameHiPerFET
PackagingTube
ConfigurationSingle
Fall Time28 ns
Forward Transconductance - Min36 S
Product TypeMOSFETs
Rise Time14 ns
SubcategoryTransistors
Transistor Type1 N-Channel
Typical Turn-Off Delay Time39 ns
Typical Turn-On Delay Time21 ns

Export and Environmental Classification

AttributeDescription
Country of OriginKorea (South)
ECCNEAR99
HTS8541290065
TARIC8541290000
RoHS CompliantYes
RoHS Compliant
RoHS Exemption NumberN/A
Lead(PB) in TerminalsCall to Verify PB
REACH SVHCNo
REACH Substance NameN/A
Warning: Cancer and Reproductive Harm - www.p65warnings.ca.gov

Documents

EDA / CAD Models

0In Stock

Available For Backorder
Lead Time: 30 Weeks
Please adjust quantity to minimum and multiple values.
Quantity
---
Unit Price
---
Ext. Price
---

Tube

(Minimum: 300 / Multiples: 50)
Quantity Unit PriceExt. Price
$1.76$528.00
Need more?

My Notes

Sign into see notes.