Reference Only
IXTP80N10T
MOSFETs 80 Amps 100V 13.0 Rds
Datasheet
IXTP80N10T DatasheetSpecifications
| Description | Product Attribute | Similar |
|---|---|---|
| Manufacturer | IXYS | |
| Product Category | MOSFETs | |
| Technology | Si | |
| Mounting Style | Through Hole | |
| Package / Case | TO-220-3 | |
| Transistor Polarity | N-Channel | |
| Number of Channels | 1 Channel | |
| Vds - Drain-Source Breakdown Voltage | 100 V | |
| Id - Continuous Drain Current | 80 A | |
| Rds On - Drain-Source Resistance | 14 mOhms | |
| Vgs - Gate-Source Voltage | - 20 V, 20 V | |
| Vgs th - Gate-Source Threshold Voltage | 2.5 V | |
| Qg - Gate Charge | 60 nC | |
| Minimum Operating Temperature | - 55 C | |
| Maximum Operating Temperature | + 175 C | |
| Pd - Power Dissipation | 230 W | |
| Channel Mode | Enhancement | |
| Tradename | HiPerFET | |
| Packaging | Tube | |
| Configuration | Single | |
| Fall Time | 48 ns | |
| Product Type | MOSFETs | |
| Rise Time | 54 ns | |
| Series | IXTP80N10 | |
| Subcategory | Transistors | |
| Transistor Type | 1 N-Channel | |
| Typical Turn-Off Delay Time | 40 ns | |
| Typical Turn-On Delay Time | 31 ns |
Export and Environmental Classification
| Attribute | Description |
|---|---|
| Country of Origin | Korea (South) |
| ECCN | EAR99 |
| HTS | 8541290065 |
| TARIC | 8541290000 |
| RoHS Compliant | Yes RoHS Compliant |
| RoHS Exemption Number | N/A |
| Lead(PB) in Terminals | Call to Verify PB |
| REACH SVHC | No |
| REACH Substance Name | N/A |
2,100In Stock
Quantity
---
Unit Price
---
Ext. Price
---
Tube
(Minimum: 50 / Multiples: 50)| Quantity | Unit Price | Ext. Price |
|---|---|---|
| $2.04 | $102.00 | |
| $2.01 | $201.00 | |
| $1.98 | $396.00 | |
| $1.86 | $930.00 | |
| $1.83 | $1,830.00 | |
| $1.80 | $4,500.00 | |
| $1.78 | $8,900.00 |
Need more?
Associated Parts

Murata
DC/DC Converters - Through Hole 2W 5-20VIN 5VOUT DC/DC
My Notes
Sign into see notes.