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IXTP3N120

MOSFETs MOSFET Id3 BVdass1200

Manufacturer:

Mfr Part:
IXTP3N120

TTI Part:
IXTP3N120

EDA / CAD Models

Specifications

DescriptionProduct Attribute
Similar
ManufacturerIXYS
Product CategoryMOSFETs
TechnologySi
Mounting StyleThrough Hole
Package / CaseTO-220-3
Transistor PolarityN-Channel
Number of Channels1 Channel
Vds - Drain-Source Breakdown Voltage1.2 kV
Id - Continuous Drain Current3 A
Rds On - Drain-Source Resistance4.5 Ohms
Vgs - Gate-Source Voltage- 20 V, 20 V
Vgs th - Gate-Source Threshold Voltage2.5 V
Qg - Gate Charge42 nC
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
Pd - Power Dissipation200 W
Channel ModeEnhancement
PackagingTube
ConfigurationSingle
Fall Time18 ns
Forward Transconductance - Min1.5 S
Product TypeMOSFETs
Rise Time15 ns
SeriesIXTP3N120
SubcategoryTransistors
Transistor Type1 N-Channel
Typical Turn-Off Delay Time32 ns
Typical Turn-On Delay Time17 ns

Export and Environmental Classification

AttributeDescription
Country of OriginKorea (South)
ECCNEAR99
HTS8541290065
TARIC8541290000
RoHS CompliantYes
RoHS Compliant
RoHS Exemption NumberN/A
Lead(PB) in TerminalsCall to Verify PB
REACH SVHCNo
REACH Substance NameN/A
Warning: Cancer and Reproductive Harm - www.p65warnings.ca.gov

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