Reference Only

IXTP3N100P

MOSFETs 3 Amps 1000V 4.8 Rds

Manufacturer:

Mfr Part:
IXTP3N100P

TTI Part:
IXTP3N100P

EDA / CAD Models

Specifications

DescriptionProduct Attribute
Similar
ManufacturerIXYS
Product CategoryMOSFETs
TechnologySi
Mounting StyleThrough Hole
Package / CaseTO-220-3
Transistor PolarityN-Channel
Number of Channels1 Channel
Vds - Drain-Source Breakdown Voltage1 kV
Id - Continuous Drain Current3 A
Rds On - Drain-Source Resistance4.8 Ohms
Vgs - Gate-Source Voltage- 20 V, 20 V
Vgs th - Gate-Source Threshold Voltage4.8 V
Qg - Gate Charge39 nC
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
Pd - Power Dissipation125 W
Channel ModeEnhancement
TradenamePolar
PackagingTube
ConfigurationSingle
Fall Time29 ns
Forward Transconductance - Min1.5 S
Product TypeMOSFETs
Rise Time27 ns
SeriesIXTP3N100
SubcategoryTransistors
Transistor Type1 N-Channel
Typical Turn-Off Delay Time75 ns
Typical Turn-On Delay Time22 ns

Export and Environmental Classification

AttributeDescription
Country of OriginKorea (South)
ECCNEAR99
HTS8541290065
TARIC8541290000
RoHS CompliantYes
RoHS Compliant
RoHS Exemption NumberN/A
Lead(PB) in TerminalsCall to Verify PB
REACH SVHCNo
REACH Substance NameN/A
Warning: Cancer and Reproductive Harm - www.p65warnings.ca.gov

Documents

EDA / CAD Models

0In Stock

Available For Backorder
Lead Time: 34 Weeks
Please adjust quantity to minimum and multiple values.
Quantity
---
Unit Price
---
Ext. Price
---

Tube

(Minimum: 300 / Multiples: 50)
Quantity Unit PriceExt. Price
$2.76$828.00
Need more?

My Notes

Sign into see notes.