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IXTN600N04T2

MOSFET Modules GigaMOS Trench T2 HiperFET PWR MOSFET

Manufacturer:

Mfr Part:
IXTN600N04T2

TTI Part:
IXTN600N04T2

EDA / CAD Models

Specifications

DescriptionProduct Attribute
Similar
ManufacturerIXYS
Product CategoryMOSFET Modules
TechnologySi
Mounting StyleScrew Mount
Package / CaseSOT-227B-4
Transistor PolarityN-Channel
Vds - Drain-Source Breakdown Voltage40 V
Id - Continuous Drain Current600 A
Rds On - Drain-Source Resistance1.3 mOhms
Vgs - Gate-Source Voltage- 20 V, + 20 V
Vgs th - Gate-Source Threshold Voltage3.5 V
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 175 C
Pd - Power Dissipation940 W
SeriesIXTN600N04
PackagingTube
ConfigurationSingle
Fall Time250 ns
Output Current600 A
Product TypeMOSFET Modules
Rise Time20 ns
SubcategoryDiscrete and Power Modules
TradenameHiPerFET
TypeTrench
Typical Turn-Off Delay Time90 ns
Typical Turn-On Delay Time40 ns
Vr - Reverse Voltage20 V

Export and Environmental Classification

AttributeDescription
Country of OriginKorea (South)
ECCNEAR99
HTS8541290065
TARIC8541290000
RoHS CompliantRoHS Per Exemption
RoHS Per Exemption
RoHS Exemption NumberN/A
Lead(PB) in TerminalsCall to Verify PB
REACH SVHCYes
REACH Substance NameLead
Warning: Cancer and Reproductive Harm - www.p65warnings.ca.gov

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Lead Time: 30 Weeks
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$26.82$8,046.00
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