Reference Only
IXTN120P20T
MOSFET Modules TrenchP Power MOSFET
Datasheet
IXTN120P20T DatasheetSpecifications
| Description | Product Attribute | Similar |
|---|---|---|
| Manufacturer | IXYS | |
| Product Category | MOSFET Modules | |
| Technology | Si | |
| Mounting Style | Screw Mount | |
| Package / Case | SOT-227-4 | |
| Transistor Polarity | P-Channel | |
| Number of Channels | 1 Channel | |
| Vds - Drain-Source Breakdown Voltage | 200 V | |
| Id - Continuous Drain Current | 106 A | |
| Rds On - Drain-Source Resistance | 30 mOhms | |
| Vgs - Gate-Source Voltage | - 15 V, + 15 V | |
| Minimum Operating Temperature | - 55 C | |
| Maximum Operating Temperature | + 150 C | |
| Pd - Power Dissipation | 830 W | |
| Series | IXTN120P20 | |
| Packaging | Tube | |
| Configuration | Single | |
| Product Type | MOSFET Modules | |
| Subcategory | Discrete and Power Modules | |
| Type | Trench | |
| Vr - Reverse Voltage | 100 V |
Export and Environmental Classification
| Attribute | Description |
|---|---|
| Country of Origin | Korea (South) |
| ECCN | EAR99 |
| HTS | 8541900080 |
| TARIC | 8541900000 |
| RoHS Compliant | Yes RoHS Compliant |
| RoHS Exemption Number | N/A |
| Lead(PB) in Terminals | Call to Verify PB |
| REACH SVHC | No |
| REACH Substance Name | N/A |
0In Stock
Available For Backorder
Lead Time: 30 Weeks
Quantity
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Unit Price
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Ext. Price
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Tube
(Minimum: 300 / Multiples: 10)| Quantity | Unit Price | Ext. Price |
|---|---|---|
| $45.37 | $13,611.00 |
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