Reference Only

IXTH88N30P

MOSFETs 88 Amps 100 V 0.04 Ohms Rds

Manufacturer:

Mfr Part:
IXTH88N30P

TTI Part:
IXTH88N30P

EDA / CAD Models

Specifications

DescriptionProduct Attribute
Similar
ManufacturerIXYS
Product CategoryMOSFETs
TechnologySi
Mounting StyleThrough Hole
Package / CaseTO-247-3
Transistor PolarityN-Channel
Number of Channels1 Channel
Vds - Drain-Source Breakdown Voltage300 V
Id - Continuous Drain Current88 A
Rds On - Drain-Source Resistance40 mOhms
Vgs - Gate-Source Voltage- 20 V, 20 V
Vgs th - Gate-Source Threshold Voltage2.5 V
Qg - Gate Charge180 nC
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
Pd - Power Dissipation600 W
Channel ModeEnhancement
PackagingTube
ConfigurationSingle
Fall Time25 ns
Product TypeMOSFETs
Rise Time24 ns
SeriesIXTH88N30
SubcategoryTransistors
Transistor Type1 N-Channel
Typical Turn-Off Delay Time96 ns
Typical Turn-On Delay Time25 ns

Export and Environmental Classification

AttributeDescription
Country of OriginKorea (South)
ECCNEAR99
HTS8541290065
TARIC8541290000
RoHS CompliantYes
RoHS Compliant
RoHS Exemption NumberN/A
Lead(PB) in TerminalsCall to Verify PB
REACH SVHCNo
REACH Substance NameN/A
Warning: Cancer and Reproductive Harm - www.p65warnings.ca.gov

Documents

EDA / CAD Models

210In Stock

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(Minimum: 30 / Multiples: 30)
Quantity Unit PriceExt. Price
$8.97$269.10
$8.87$798.30
$8.25$1,237.50
$8.15$3,667.50
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