Reference Only
IXTH80N65X2
MOSFETs TO247 650V 80A N-CH X2CLASS
Datasheet
IXTH80N65X2 DatasheetSpecifications
| Description | Product Attribute | Similar |
|---|---|---|
| Manufacturer | IXYS | |
| Product Category | MOSFETs | |
| Technology | Si | |
| Mounting Style | Through Hole | |
| Package / Case | TO-247-3 | |
| Transistor Polarity | N-Channel | |
| Number of Channels | 1 Channel | |
| Vds - Drain-Source Breakdown Voltage | 650 V | |
| Id - Continuous Drain Current | 80 A | |
| Rds On - Drain-Source Resistance | 38 mOhms | |
| Vgs - Gate-Source Voltage | - 30 V, 30 V | |
| Vgs th - Gate-Source Threshold Voltage | 2.7 V | |
| Qg - Gate Charge | 137 nC | |
| Minimum Operating Temperature | - 55 C | |
| Maximum Operating Temperature | + 150 C | |
| Pd - Power Dissipation | 890 W | |
| Channel Mode | Enhancement | |
| Tradename | HiPerFET | |
| Packaging | Tube | |
| Configuration | Single | |
| Fall Time | 7 ns | |
| Forward Transconductance - Min | 36 S | |
| Product Type | MOSFETs | |
| Rise Time | 11 ns | |
| Subcategory | Transistors | |
| Transistor Type | 1 N-Channel | |
| Typical Turn-Off Delay Time | 72 ns | |
| Typical Turn-On Delay Time | 36 ns |
Export and Environmental Classification
| Attribute | Description |
|---|---|
| Country of Origin | Korea (South) |
| ECCN | EAR99 |
| HTS | 8541290065 |
| TARIC | 8541290000 |
| RoHS Compliant | RoHS Per Exemption RoHS Per Exemption |
| RoHS Exemption Number | N/A |
| Lead(PB) in Terminals | Call to Verify PB |
| REACH SVHC | Yes |
| REACH Substance Name | Lead |
300In Stock
Quantity
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Unit Price
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Ext. Price
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Tube
(Minimum: 30 / Multiples: 30)| Quantity | Unit Price | Ext. Price |
|---|---|---|
| $9.19 | $275.70 | |
| $8.69 | $1,042.80 | |
| $8.60 | $4,386.00 |
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